Doping-dependent mobility analysis of junction field-effect transistors

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Doping-dependent mobility analysis of junction field-effect transistors

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© The Institution of Electrical Engineers
Published

An analysis of a junction field-effect transistor, taking into account the doping-dependent mobility, is presented for an assumed arbitrary impurity distribution in the channel. The values of transconductance and drain current obtained from the new relationships are found to deviate considerably from the theoretical values of these parameters estimated from the existing relationships.

Inspec keywords: field effect transistors; semiconductor doping; electron mobility

Other keywords: transconductance; semiconductor doping; junction field effect transistor; drain current; arbitrary impurity distribution; doping dependence electron mobility

Subjects: Semiconductor doping; Other field effect devices

References

    1. 1)
      • T. Sugano , F. Koshiga . The calculations of cut-off frequency of minority carrier transport factor in drift transistors when mobilities are not constant. Proc. Inst. Radio Engrs.
    2. 2)
      • J.R. Hauser . (1968) Unipolar transistors, Fundamentals of silicon integrated device technology.
    3. 3)
      • A.H. Marshok . Optimum doping distribution for minimum base transit time. IEEE Trans. , 190 - 194
    4. 4)
      • Gupta, R.K.: `An extension of the analysis and modelling of j.f.e.t.s.', September 1970, M.Sc.(Tech.) electronics thesis, Birla Institute of Technology & Science, Pilani, India.
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