Doping-dependent mobility analysis of junction field-effect transistors

Doping-dependent mobility analysis of junction field-effect transistors

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

An analysis of a junction field-effect transistor, taking into account the doping-dependent mobility, is presented for an assumed arbitrary impurity distribution in the channel. The values of transconductance and drain current obtained from the new relationships are found to deviate considerably from the theoretical values of these parameters estimated from the existing relationships.


    1. 1)
      • J.R. Hauser . (1968) Unipolar transistors, Fundamentals of silicon integrated device technology.
    2. 2)
      • T. Sugano , F. Koshiga . The calculations of cut-off frequency of minority carrier transport factor in drift transistors when mobilities are not constant. Proc. Inst. Radio Engrs.
    3. 3)
      • A.H. Marshok . Optimum doping distribution for minimum base transit time. IEEE Trans. , 190 - 194
    4. 4)
      • Gupta, R.K.: `An extension of the analysis and modelling of j.f.e.t.s.', September 1970, M.Sc.(Tech.) electronics thesis, Birla Institute of Technology & Science, Pilani, India.

Related content

This is a required field
Please enter a valid email address