Performance of InP 3-level oscillators in K and Q bands: 18–40 GHz

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Performance of InP 3-level oscillators in K and Q bands: 18–40 GHz

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© The Institution of Electrical Engineers
Published

Epitaxial InP of 5.4 μm thickness has oscillated at frequencies up to 40 GHz and has yielded an efficiency of within 2% at 29.4 GHz. The optimum operating frequency for these 3-level oscillators appears to be determined by a defined transit velocity, and results have not suggested that an upper frequency limit has yet been encountered.

Inspec keywords: microwave oscillators; space charge

Other keywords: space charge; transferred electron oscillators; 18 to 40 GHz; Q-band; K-band; InP; microwave three level oscillators

Subjects: Solid-state microwave circuits and devices; Bulk effect devices; Oscillators

References

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      • B.C. Taylor , D.J. Colliver . InP microwave oscillators.
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      • C. Hilsum , J.B. Mullin , B.A. Prew , H.D. Rees , B.W. Straughan . Instabilities of InP 3-level transferred-electron oscillators. Electron. Lett. , 307 - 308
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      • C. Hilsum , H.D. Rees . 3-level oscillator: a new form of transferred-electron device. Electron. Lett. , 277 - 278
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      • D. Colliver , C. Hilsum , B.D. Joyce , J.R. Morgan , H.D. Rees , J.R. Knight . Microwave generation by InP 3-level transferred-electron oscillators. Electron. Lett.
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      • Joyce, B.D., Williams, E.W.: `Preparation and photoluminescent properties of high purity vapour grown InP layers', Proceedings the 3rd conference on gallium arsenide and related compounds, 1970, Aachen.
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      • O.F. Zimmerl . Frequency limitations of 3-level oscillators. Electron. Lett. , 728 - 729
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