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Some new properties of forward-biased emitter-base junction of gigahertz silicon transistors

Some new properties of forward-biased emitter-base junction of gigahertz silicon transistors

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© The Institution of Electrical Engineers
Published

Accurate numerical solutions of a p+-n junction revealed that its capacitance becomes negative under large forward bias. Small-signal measurements were made on the forward-biased emitter-base junction of transistors in the frequency range of 1 MHz-2.4 GHz. These measurements revealed the negative capacitance (inductive effects). The numerical and experimental results are in good agreement.

Inspec keywords: p-n junctions; microwave devices; transistors

Subjects: Bipolar transistors; Solid-state microwave circuits and devices

References

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