Some new properties of forward-biased emitter-base junction of gigahertz silicon transistors
Accurate numerical solutions of a p+-n junction revealed that its capacitance becomes negative under large forward bias. Small-signal measurements were made on the forward-biased emitter-base junction of transistors in the frequency range of 1 MHz-2.4 GHz. These measurements revealed the negative capacitance (inductive effects). The numerical and experimental results are in good agreement.