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Leakage currents, surface current and 1/f noise in planar bipolar transistors

Leakage currents, surface current and 1/f noise in planar bipolar transistors

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Using arguments based on the d.c. equivalent circuit of a planar bipolar transistor, it is shown that the ratio ICEO/ICBO is a measure of the significance of surface recombination current. Measurements of 1/f noise and ICEO/ICBO for a variety of transistors provide new evidence that the 1/f noise is due to the surface recombination current.

References

    1. 1)
      • C.T. Sah , F.H. Hielscher . Evidence of the surface origin of 1/f noise. Phys. Rev. Lett.
    2. 2)
      • J.C. Martin , D. Esteve , A. Decacqueray , J.M. Ribeyrol . (1968) , 1/.
    3. 3)
      • G. Blasquez , J.C. Martin , J.M. Ribeyrol . , Étude du bruit de fond basse frequence des transistors clans au silicium.
    4. 4)
      • Bailbe, J.P.: `Identification et caracterisation du comportement electrique des transistors binolaires eregime statique', 1969, Thesis, University of Toulouse, Dr.de 3 Cycle.
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