Behaviour of a low-noise microwave f.e.t. at low temperature

Behaviour of a low-noise microwave f.e.t. at low temperature

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The values of gain and noise figure at 1000 MHz were measured against temperature (from 300 to 77K) for a GaAs f.e.t., in common-source configuration. An important decrease in noise figure from 3.2 to 1.5 dB with a 2 dB increase in gain was observed.


    1. 1)
      • M. Whittam , J. Unsworth , R.R. Gray . The behaviour of n type silicon fets at cryogenic temperatures. Cryogenics , 388 - 390
    2. 2)
      • D.V. Eddolls . Electrical properties of n type epitaxial gallium arsenide. Phys. Status Solidi , 67 - 76
    3. 3)
      • F.N.H. Robinson . Noise in common-source f.e.t. amplifiers at moderately high frequencies. Electron. Engng. , 77 - 79
    4. 4)
      • R.D. Ryan . The gate currents of junction field-effect transistors at low temperatures. Proc. Inst. Elect. Electron. Engrs. , 1225 - 1226

Related content

This is a required field
Please enter a valid email address