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Behaviour of a low-noise microwave f.e.t. at low temperature

Behaviour of a low-noise microwave f.e.t. at low temperature

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The values of gain and noise figure at 1000 MHz were measured against temperature (from 300 to 77K) for a GaAs f.e.t., in common-source configuration. An important decrease in noise figure from 3.2 to 1.5 dB with a 2 dB increase in gain was observed.

References

    1. 1)
      • M. Whittam , J. Unsworth , R.R. Gray . The behaviour of n type silicon fets at cryogenic temperatures. Cryogenics , 388 - 390
    2. 2)
      • D.V. Eddolls . Electrical properties of n type epitaxial gallium arsenide. Phys. Status Solidi , 67 - 76
    3. 3)
      • F.N.H. Robinson . Noise in common-source f.e.t. amplifiers at moderately high frequencies. Electron. Engng. , 77 - 79
    4. 4)
      • R.D. Ryan . The gate currents of junction field-effect transistors at low temperatures. Proc. Inst. Elect. Electron. Engrs. , 1225 - 1226
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