Resistivity calculations for inhomogeneously doped germanium

Resistivity calculations for inhomogeneously doped germanium

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An analytical expression defining the total mobility μ in germanium as a function of doping and temperature is obtained. Although based on certain empirical relations, the expression for μ is found to be reasonably valid in the useful and normally encountered concentration and temperature ranges. The mobility thus obtained is used to calculate the average conductivity of diffused impurity layers (p type) in germanium for Gaussian and complementary-error-function distributions. Results thus obtained are found to be in good agreement with those obtained by the numerical integration method.


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