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Efficient power extraction at TRAPATT harmonics

Efficient power extraction at TRAPATT harmonics

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Using silicon planar diodes in a coaxial cavity that closely approximates to- Evans's TRAPATT circuit, microwave power up to the fourth harmonic has been extracted efficiently with a very low subharmonic content. The efficiency at the fundamental (1 GHz) and the third harmonic (3 GHz) were almost identical at 35% and 34%, respectively.

References

    1. 1)
      • B.C. Deloach , D.L. Scharfetter . Device physics of TRAPATT oscillators. IEEE Trans. , 9 - 21
    2. 2)
      • S.G. Liu , J.J. Risko , K.K.N. Chang . High power K band silicon avalanche diode oscillators. Proc. Inst. Elect. Electron. Engrs. , 919 - 920
    3. 3)
      • W.J. Evans . Circuit for high efficiency avalanche diode oscillators. IEEE Trans. , 1060 - 1067
    4. 4)
      • Carroll, J.E.: `The use of pseudo-transients in the solution of the Evans' TRAPATT circuit', Paper presented at the 8th international conference on microwave and optical generation and amplification, September 1970.
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