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The velocity of guided electromagnetic (e.m.) waves in a stripline of GaAs is strongly reduced by the finite conductivity in the strip. Travelling-domain formation is prevented if 2c becomes smaller than the domain drift velocity, and a static high-field domain may form at the anode. The slow e.m. wave is expected to influence strongly the transmission-amplification gain.
References
-
-
1)
-
S. Kataoka ,
H. Tateno ,
M. Kawashima
.
Supression of travelling high-field-domain mode oscillations in GaAs by dielectric surface loading.
Electron. Lett.
,
48 -
50
-
2)
-
Kataoka, S., Tateno, H., Kawashima, M., Komamia, Y.: `Microwave oscillation and amplification in a long bulk GaAs with BaTiO', Proceedings of 1968 MOGA conference, 1968, 35, p. 454–460, published in Nachrichtentech. Fachber..
-
3)
-
K. Sekido ,
T. Takeuchi ,
F. Hasegawa ,
S. Kikuchi
.
C.W. oscillation in GaAs planar type bulk diodes.
Proc. Inst. Elect. Electron. Engrs.
,
815 -
816
-
4)
-
C.P. Sandbank
.
Synthesis of complex electronic functions by solid state bulk effects.
Solid-State Electron.
,
369 -
380
-
5)
-
J.M. Hammer
.
Coupling between slow waves and convective instabilities in solids.
Appl. Phys. Lett.
,
358 -
360
-
6)
-
J.A. Copeland
.
L.S.A. oscillator diode theory.
J. Appl. Phys.
,
3096 -
3101
-
7)
-
G.S. Kino ,
P.N. Robson
.
The effect of small transverse dimensions on the operation of Gunn devices.
Proc. Inst. Elect. Electron. Engrs.
,
2056 -
2057
-
8)
-
R.W.H. Engelmann
.
On the transverse surface boundary effect in Gunn devices.
Proc. Inst. Elect. Electron. Engrs.
,
818 -
819
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