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Field-emission-controlled transit-time negative resistance

Field-emission-controlled transit-time negative resistance

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© The Institution of Electrical Engineers
Published

Field emission from a Schottky contact on an n+–n–n++ semiconductor is proposed for carrier injection into a space-charge region to produce a negative transit-time resistance in the microwave range. Field-emission transit-time diodes are considered to behave linearly up to amplitude saturation, to exhibit low-noise performance, and to be capable of very high frequencies (1010−1012 Hz).

Inspec keywords: semiconductor diodes; transit time devices

Subjects: Junction and barrier diodes

References

    1. 1)
      • S.M. Sze . (1981) , Physics of semiconductor devices.
    2. 2)
      • V.K. Aladinskii . Tunnel breakdown in p–n junctions and the generation of microwave oscillations. Soviet Phys. Semicoductors , 517 - 520
    3. 3)
      • W.T. Read . A proposed high-frequency negative resistance diode. Bell Syst. Tech. J. , 401 - 446
    4. 4)
      • M.E. Hines . Noise theory for the Read type avalanche diode. IEEE Trans. , 158 - 163
    5. 5)
      • F.A. Padovani , R. Stratton . Field and thermionic-field emission in Schottky barriers. Solid-State Electron. , 695 - 707
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