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Accurate calculation of small-signal growth rates in avalanche diodes

Accurate calculation of small-signal growth rates in avalanche diodes

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© The Institution of Electrical Engineers
Published

The small-signal oscillation frequency and growth rate is calculated for an avalanche diode having a general doping profile, allowing for accurate drift velocity and ionisation rate. The analysis includes the case of a typical microwave load connected to the diode. A connection is found between this accurate growth rate and a properly defined Q factor for the whole circuit.

Inspec keywords: avalanche diodes

Subjects: Junction and barrier diodes

References

    1. 1)
      • T. Misawa . Nigative resistance in p-n junctions under avalanche breakdown conditions—Pt. 1. IEEE Trans. , 137 - 143
    2. 2)
      • D. Parker , A.I. Grayzel . Natural mode of oscillation in a p-n avalanche diode. Proc. Inst. Elect. Electron. Engrs. , 266 - 268
    3. 3)
      • I. Lundström , O. Nilsson . Stability and transient behaviour of active 2-poles. Electron. Lett. , 219 - 221
    4. 4)
      • I. Lundström . Calculation of growth rates in oscillators. Electron. Lett. , 319 - 320
    5. 5)
      • T. Misawa . Negative resistance in p-n junctions under avalanche breakdown conditions—Pt. 2. IEEE Trans. , 143 - 151
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