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Simple graphical method for calculating the efficiency of bulk negative-resistance microwave oscillators

Simple graphical method for calculating the efficiency of bulk negative-resistance microwave oscillators

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© The Institution of Electrical Engineers
Published

A graphical method is given for calculating the efficiency of a bulk negative-resistance microwave oscillator. It is shown that, for a square-wave r.f. signal, InP 3-level oscillators should have an efficiency of over 20% at fields only twice threshold, and In0.2Ga0.8Sb oscillators should give an efficiency of over 35%

Inspec keywords: microwave oscillators

Subjects: Oscillators; Solid-state microwave circuits and devices

References

    1. 1)
      • W.K. Kennedy , L.F. Eastman , R.J. Gilbert . LSA operation of large volume bulk GaAs samples. IEEE Trans. , 500 - 504
    2. 2)
      • C. Hilsum , H.D. Rees . Three-level oscillator: a new form of transferred-electron device. Electron. Lett. , 277 - 278
    3. 3)
      • C. Hilsum , J.B. Mullin , B.A. Prew , H.D. Rees , B.W. Straughan . Instabilities of InP 3-level transferred-electron oscillators. Electron. Lett. , 307 - 308
    4. 4)
      • J.E. Carroll . Criteria for the assessment of transferred-electron materials. Electron. Lett. , 393 - 394
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