Microwave generation by InP 3-level transferred-electron oscillators

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Microwave generation by InP 3-level transferred-electron oscillators

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© The Institution of Electrical Engineers
Published

Preliminary measurements of the oscillator performance of InP transferred-electron devices are reported. Power has been obtained at frequencies up to 14.5 GHz. The highest efficiency obtained to date is 7% at 8.5 GHz.

Inspec keywords: microwave oscillators

Subjects: Solid-state microwave circuits and devices; Oscillators

References

    1. 1)
      • C. Hilsum , J.B. Mullin , B.A. Prew , H.D. Rees , B.W. Straughan . Instabilities of InP 3-level transferred-electron oscillators. Electron. Lett. , 307 - 308
    2. 2)
      • C. Hilsum , H.D. Rees . Three-level oscillator: a new form of transferred-electron device. Electron. Lett. , 277 - 278
    3. 3)
      • R.C. Clarke , B.D. Joyce , W.H.E. Wilgoss . The preparation of high purity epitaxial InP. Solid-State Commun.
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