Excess leakage-current noise in junction field-effect transistors

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Excess leakage-current noise in junction field-effect transistors

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Measurements are reported of the excess gate leakage current IG in several n channel f.e.t.s, showing that IG varies exponentially with the inverse square root of the bias voltage between drain and gate. IG shows full shot noise, together with a component of the form Ign2∞IGβ/fα where values of 1.4 and 1.6 have been found for α and β, respectively.

Inspec keywords: noise; field effect transistors; leakage currents

Subjects: Other field effect devices

References

    1. 1)
      • P.O. Lauritzen . Low frequency generation noise in junction field effect transistors. Solid-State Electron. , 41 - 58
    2. 2)
      • I.R.M. Mansour , R.J. Hawkins , G.G. Bloodworth . Digital analysis of current noise at very low frequencies. Radio Electron. Engr. , 201 - 211
    3. 3)
      • A. van der Ziel . Thermal noise in field effect transistors. Proc. Inst. Radio Engrs. , 1808 - 1812
    4. 4)
      • E.P. Fowler . Effect of operating conditions on reverse gate current of junction f.e.t.s. Electron. Lett. , 216 - 217
    5. 5)
      • Hawkins, R.J.: `Current noise in field effect transistors', 1970, Ph.D. thesis, University of Southampton.
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