Measurements of statistical burst-noise characteristics

Access Full Text

Measurements of statistical burst-noise characteristics

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

In a previous letter, a dislocation model of planar-silicon-transistor burst noise was proposed. The burst statistical parameters have been measured and their dependence on bias is in good agreement with the model.

Inspec keywords: noise measurement; bipolar transistors

Subjects: Bipolar transistors

References

    1. 1)
      • W.H. Card , P.K. Chaudhari . Characteristics of burst noise. Proc. Inst. Elect. Electron. Engrs. , 652 - 653
    2. 2)
      • J. Mulet , G. Sala , A. Luque . Convertidor tiempotensión para el análisis de funciones de distribución de procesos aleatorios. Rev. Telecomunicación
    3. 3)
      • Mulet, J., and Rodriguez, T.: 'Caracterización estadistica del ruido “burst”,' NI Laboratorio Electrónica II 3.70, ETSIT, Madrid, or Blazquez, G., Martin, J. C., and Ribeyrol, J. M., Ref. GB/ED/112/69/LA, Laboratoire d'Automatique, Toulouse, France.
    4. 4)
      • A. Luque , J. Mulet , T. Rodriguez , R. Segovia . Proposed dislocation theory of burst noise in planar transistors. Electron. Lett. , 176 - 178
    5. 5)
      • G. Giralt , J.C. Martin , F.X. Mateu-Perez . Le bruit en créneaux des transistors plans au silicium. Electron. Lett. , 228 - 230
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19700278
Loading

Related content

content/journals/10.1049/el_19700278
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading