Diffusion in semiconductors

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Diffusion in semiconductors

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When the concentration of diffusing impurity in a semiconductor approaches or exceeds the intrinsic concentration of electrons or holes at the temperature of diffusion, the resulting partial differential equation becomes nonlinear. A computer program has been prepared to obtain the profile of the diffused impurity for such a situation.

References

    1. 1)
      • A.S. Grove . (1967) , Physics and technology of semiconductor devices.
    2. 2)
      • F.M. Smits . Formulation of junction structures by solid state diffusion. Proc. Inst. Radio Engrs. , 1049 - 1061
    3. 3)
      • J. Crank . (1956) , The mathematics of diffusion.
    4. 4)
      • R.B. Adler , A.C. Smith , R.L. Longini . (1964) , Introduction to semi-conductor physics—Vol. 1.
    5. 5)
      • S.K. Ghandhi . (1968) , The theory and practice of microelectronics.
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Erratum: Diffusion in semiconductors