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Modelling of short-channel m.o.s. transistors

Modelling of short-channel m.o.s. transistors

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The effects of both the bulk charge due to the drain depletion region and the saturation of carrier velocity on the current/voltage characteristics of short-channel m.o.s.t.s are considered. Theoretical calculations based on both 2-dimensional and 1-dimensional models show close agreement with experimental measurements.

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