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Instabilities of InP 3-level transferred-electron oscillators

Instabilities of InP 3-level transferred-electron oscillators

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Experimental investigations of current instabilities in samples of bulk n type InP show an inherent domain-suppression mechanism in agreement with theoretical predictions of electron transfer between three sets of conduction-band valleys.

References

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      • C. Hilsum , H.D. Rees . Three-level oscillator: a new form of transferred-electron device. Electron. Lett. , 277 - 278
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