Three-level oscillator: a new form of transferred-electron device

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Three-level oscillator: a new form of transferred-electron device

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© The Institution of Electrical Engineers
Published

Electron transfer between three appropriately coupled sets of conduction-band valleys produces transport properties peculiarly favourable for transferred-electron devices. The necessary conditions should obtain in InP and in InP-InAs and InSb-GaSb alloys. Monte Carlo calculations of the velocity/field characteristics for these materials are described.

Inspec keywords: microwave oscillators; Monte Carlo methods; band structure

Subjects: Solid-state microwave circuits and devices; Semiconductor technology

References

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