Interface states in the silicon/silicon-oxide system observed by thermally stimulated charge release

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Interface states in the silicon/silicon-oxide system observed by thermally stimulated charge release

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© The Institution of Electrical Engineers
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The experiment of thermally stimulated charge release has been used in the m.o.s. capacitor to study electron and hole states in the metal-oxide-silicon system. Broadly similar results have been obtained for ‘wet’ and ‘dry’ oxides on ‘mechanically’ and ‘chemically’ polished silicon surfaces. A representative spectrum is presented showing electron and hole interface states spread over most of the energy band gap.

Inspec keywords: elemental semiconductors; semiconductor-insulator boundaries; silicon; metal-insulator-semiconductor structures; thermal effects

Subjects: Electrical properties of metal-insulator-semiconductor structures; Metal-insulator-semiconductor structures; Other field effect devices

References

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      • Kendall, E.J.M.: `The passivation of silicon using silicon nitride and a study of the silicon/silicon-nitride system', 1969, Ph.D. thesis, University of Birmingham, Department of Electronic & Electrical Engineering.
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      • Saunders, A.F.: `The silicon-insulator interface and its localised states', 1966, Ph.D. thesis, University of Birmingham, Department of Electronic & Electrical Engineering.
    5. 5)
      • M.C. Driver , G.T. Wright . Thermal release of trapped space-charge in solids. Proc. Phys. Soc. , 141 - 147
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      • R.H. Bube . (1960) , Photoconductivity in solids.
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