External current-waveform measurements of high-efficiency oscillations in silicon avalanche diodes

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External current-waveform measurements of high-efficiency oscillations in silicon avalanche diodes

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© The Institution of Electrical Engineers
Published

A coaxial current-monitoring assembly, introducing negligible phase error up to 9 GHz, has enabled the precise determination of high-efficiency current waveforms in Si avalanche diodes. No deterioration of performance occurred for diode areas <10−4cm2. Observed waveforms were of ‘spike’ or ‘sawtooth’ shape.

Inspec keywords: oscillations; avalanche diodes

Subjects: Junction and barrier diodes

References

    1. 1)
      • W.E. Schroeder , G.I. Haddad . Comments on simplified model for avalanche-resonance-pumped semiconductor diodes. Electron. Lett. , 114 - 116
    2. 2)
      • H. Torizuko , H. Yanai . Observation of the current and voltage waveforms of the silicon IMPATT diode. Proc. Inst. Elect. Electron. Engrs. , 349 - 350
    3. 3)
      • Yanai, H., Torizuka, H., Yamada, N.: `Observation of the current and voltage waveforms of the avalanche diode oscillators', Convention Record of the Institute of Electrical Communication Engineers of Japan, September 1969, private communication.
    4. 4)
      • Scharfetter, D.L.: `High-efficiency operation of IMPATT diodes', presented at International Electron Devices Meeting, 23rd–25th October 1968, .
    5. 5)
      • B. Hoefflinger , F. Zappert , C.P. Snapp . Simplified model for avalanche-resonance-pumped semiconductor diodes. Electron. Lett. , 590 - 592
    6. 6)
      • R.L. Johnston , D.L. Scharfetter . Low-frequency high-efficiency oscillations in germanium IMPATT diodes. IEEE Trans. , 905 - 911
    7. 7)
      • Snapp, C.P., Stark, L.A., Hoefflinger, B.: `Performance and theory of avalanche-resonance pumped IMPATT oscillators', presented at International Electron Devices Meeting, 23rd–25th October 1968, .
    8. 8)
      • W.J. Evans . Circuits for high efficiency avalanche diode oscillators. IEEE Trans. , 1060 - 1067
    9. 9)
      • A.S. Clorfeine , R.J. Ikola , L.S. Napoli . A theory for the high-efficiency mode of oscillation in avalanche diodes. RCA Rev. , 397 - 421
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