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Electrical-conductivity measurements are reported for the material As30Te48Si12Ge10 used in glass switching diodes. The conductivity at 1000 K is more than three orders of magnitude greater than is predicted by simple extrapolation of the room-temperature behaviour. The measured parameters are adequate to account for the observed ‘on’-state resistance and subnanosecond switching times of the diodes according to a model in which thermal runaway initiates discharge of the self capacitance.
Inspec keywords: glass; semiconductor devices; semiconductor materials; electrical conductivity of solids; electrical conductivity; semiconductor switches
Subjects: Electrical conductivity phenomena in semiconductors and insulators; Relays and switches; Electrical properties of interfaces; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Semiconductor devices; Other semiconductor devices