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Influence de la réduction de mobilite due au champ transversal sur les caractéristiques des transistors m.o.s. (Influence on the characteristics of m.o.s. transistors of the mobility reduction due to a transverse electric field

Influence de la réduction de mobilite due au champ transversal sur les caractéristiques des transistors m.o.s. (Influence on the characteristics of m.o.s. transistors of the mobility reduction due to a transverse electric field

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La lettre analyse l'effet de la réduction de mobilité des porteurs, sous l'action du champ transversal, surles caractéristiques des transistors m.o.s. On y détermine l'expression du courant de drain en utilisant une dépendence hyperbolique entre la mobilité et le champ transversal. Cette expression est en bonne concordance avec les résultats expérimentaux. Les méthodes de détermination des parametrés intervenant dans la relation IO(VG.VD) sont exposees.The letter deals with the effect of the reduction of the carrier mobility on the characteristics of an m.o.s. transistor when a transverse field is applied. The expression for the drain current is developed by the use of a hyperbolic relation between the mobility and the transverse field, and gives good agreement with the experiment. The determination of the parameters used in the IO(VG.VD) relation is presented.

References

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      • A.S. Grove . (1967) , Physics and technology of semiconductor devices.
    2. 2)
      • P. Rossel , R.R. Schrieffer . Thèse de Docteur Ingénieur, Faculté des Sciences de Toulouse. Phys. Rev. , 641 - 646
    3. 3)
      • R. Poirier . Electronic mobility in an inversion layer at the surface of a semiconductor. CR Acad. Sci. [B] , 281 - 184
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