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Simplified model for avalanche-resonance-pumped semiconductor diodes

Simplified model for avalanche-resonance-pumped semiconductor diodes

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A simplified model for avalanche-resonance pumped semiconductor diodes is presented in terms of its voltage/current relation and its equivalent circuit. All signal levels can be handled and the compatibility with lumped or transmission line circuits will be useful for circuit modelling. Small- and large-signal examples for degenerate pumping are described.

References

    1. 1)
      • W.T. Read . A proposed high-frequency negative-resistance diode. Bell Syst. Tech. J. , 401 - 466
    2. 2)
      • C.P. Snapp , L.A. Stark , B. Hoefflinger . Experimental analysis of high-efficiency avalanche-resonance pumped oscillators. Electron. Lett. , 595 - 596
    3. 3)
      • B. Hoefflinger . Recent developments on avalanche diode oscillators. Microwave J. , 101 - 115
    4. 4)
      • R.J. Johnston , D.L. Scharfetter , D.J. Bartelink . High-efficiency oscillations in Ge avalanche diodes below the transit-time frequency. Proc. Inst. Elect. Electron. Engrs. , 1611 - 1613
    5. 5)
      • D.J. Bartelink , D.L. Scharfetter . Avalanche shock fronts in p-n junctions. Appl. Phys. Lett. , 320 - 323
    6. 6)
      • B. Hoefflinger , C.P. Snapp , L.A. Stark . High-efficiency avalanche-resonance pumped amplification. Electron. Lett. , 43 - 45
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