Gettering of impurities from gallium arsenide

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Gettering of impurities from gallium arsenide

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© The Institution of Electrical Engineers
Published

Impurities have been gettered from gallium arsenide using a glass surface layer. Mobility has been found to increase by a factor of two to three. Injection-laser threshold current density at 77K reduced from 750Acm−2 to 425Acm−2.

Inspec keywords: semiconductor materials; semiconductor defects

Subjects: Semiconductor technology; Thin film growth and epitaxy

References

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