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Electrical characteristics of p type germanium layers doped by ion implantation

Electrical characteristics of p type germanium layers doped by ion implantation

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Layers of ptype germanium have been produced by bombardment of ntype specimens with 40keV Ga+ or In+ ions. Measurements of Hall mobility and carrier concentration as a function of depth suggest that the degradation of mobility due to the radiation damage produced by the implant is completely removed after anneal. 50% of Ga ions and 10–15% of In ions became electrically active. These percentages were independent of dose over the range measured (1011cm-2 3 × 1013cm-2).

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