Influence of circuit parameters on Gunn-oscillator performance

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Influence of circuit parameters on Gunn-oscillator performance

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© The Institution of Electrical Engineers
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Output power and tuning range of Gunn oscillators are determined as functions of the resonant-load resistance. Differing n0L products (1.2 and 4.8 ×1012cm-2) lead to strikingly different results which are related to the delayed-and quenched-domain resonant modes, respectively.

Inspec keywords: Gunn oscillators; oscillators; tuning

Subjects: Solid-state microwave circuits and devices; Bulk effect devices; Oscillators

References

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      • D.E. McCumber , A.G. Chynoweth . Theory of negative conductance amplification and of Gunn instabilities in “two-valley” semiconductors. IEEE Trans. , 4 - 21
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      • Engelmann, R.W.H., Pollmann, H.: `Detailed analysis of a TEM transmission-line resonator for solid-state microwave oscillator application', Proceedings of the MOGA Conference, 1968, 35, Nachrichtentech. Fachber., p. 487–492.
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      • W. Heinle . Principles of a phenomenological theory of Gunn-effect domain dynamics. Solid-State Electron. , 583 - 598
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