Experimental determination of the ratio of injected hole current and total current in silicon nitride

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Experimental determination of the ratio of injected hole current and total current in silicon nitride

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© The Institution of Electrical Engineers
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In a metal-Si3N4-nSi structure, the net minority-carrier generation rate is equal to the hole injection rate into the insulator under balanced conditions. The generation rate has been determined experimentally, giving the ratio of the injected hole current and the total current in the Si3N4 film.

Inspec keywords: silicon compounds; metal-insulator-semiconductor structures; thin films

Subjects: Metal-insulator-semiconductor structures; Electrical properties of metal-insulator-semiconductor structures

References

    1. 1)
      • F.H. Hielscher , H.M. Preier . Non-equilibrium C-V and I-V characteristics of metal-insulator-semiconductor capacitors. Solid-State Electron. , 527 - 538
    2. 2)
      • M. Zerbst . Relaxationseffekte an Halbleiter-Isolator-Grenzflächen. Z. Angew. Phys. , 30 - 33
    3. 3)
      • F.P. Heiman . On the determination of minority carrier lifetime from the transient response of an M.O.S. capacitor. IEEE Trans. , 781 - 784
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