Two-dimensional solution of the d.c. characteristics for the m.o.s.t.

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Two-dimensional solution of the d.c. characteristics for the m.o.s.t.

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© The Institution of Electrical Engineers
Published

A method is outlined for the determination of a 2-dimensional solution of the potential distribution in the substrate of the m.o.s.t., based on the complete depletion-neutral approximation. Channel current is derived from a 1-dimensional solution of the continuity equation along the silicon-silicon dioxide interface, for given values of extrinsically applied electrode potentials. Theoretical characteristics have been validated by comparison with those of a practical device. A discussion of pinchoff is also included.

Inspec keywords: metal-insulator-semiconductor devices; characteristics measurement

Subjects: Other electric variables measurement; Other field effect devices

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