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Cathodoluminescence of oxygen-implanted zinc-doped gallium phosphide

Cathodoluminescence of oxygen-implanted zinc-doped gallium phosphide

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Oxygen has been introduced by ion implantation into zinc-doped epitaxial gallium phosphide grown from the vapour phase. After annealing, cathodoluminescence from zinc-oxygen pairs is observed, having an efficiency approaching that of bulk zinc-oxygen doped solution-grown material. For a zinc concentration of 2 × 1017cm−3, an optimum oxygen concentration for cathodoluminescence of 3 × 1018cm−3 is exhibited.

References

    1. 1)
      • K.K. Shih , M.R. Lorenz , L.M. Foster . Preparation of efficient electroluminescent diodes from p–on–n liquid-phase epitaxial layers of GaP. J. Appl. Phys. , 2747 - 2749
    2. 2)
      • D. Effer , G.R. Antell . Preparation of InAs, InP, GaAs, and GaP by chemical methods. J. Electrochem. Soc. , 252 - 253
    3. 3)
      • L.N. Large . Ion implantation doping of semiconductors. Contemporary Phys.
    4. 4)
      • R.M. Allen . Summation of Gaussians for ion-implantation profile control. Electron. Lett. , 111 - 112
    5. 5)
      • G. Dearnaley , J.H. Freeman , G.A. Gard , M.A. Wilkins . Implantation profiles of 32P channeled in silicon crystals. Canad. J. Phys. , 587 - 595
    6. 6)
      • J.L. Whitton , G. Carter , J.H. Freeman , G.A. Gard . The implantation profiles of 10, 20 and 40keV 85Kr in gallium arsenide. J. Materials Sci. , 208 - 217
    7. 7)
      • J.D. Cuthbert , C.H. Henry , P.J. Dean . Temperature-dependent radiative recombination mechanisms in GaP (Zn, O) and GaP (Cd. O). Phys. Rev. , 739 - 748
    8. 8)
      • D.B. Wittry , D.F. Kyser . Measurement of diffusion lengths in direct-gap semiconductors by electron-beam excitation. J. Appl. Phys. , 375 - 382
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