Experimental evidence of transit-time effects in silicon punch-through diodes

Experimental evidence of transit-time effects in silicon punch-through diodes

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Small-signal frequency characteristics indicating the effect of hole transit times were measured for ‘punch-through’ pvp silicon diodes. The transit time was sufficiently long to allow measurements in a relatively low frequency range (0.5–18MHz), thus avoiding parasitic effects. Experimental results for several operating points in the square-law region of the d.c. characteristic agree very well with the theoretical frequency characteristics.


    1. 1)
      • J. Shao , G.T. Wright . Characteristics of the space-charge-limited dielectric diode at very high frequencies. Solid-State Electron. , 291 - 303
    2. 2)
      • S.H. Chisholm , Chuan-Sung Yeh . Evidence of transit-time effects in silicon n–v–n space-charge-limited current solid-state devices. Electron. Lett. , 498 - 499
    3. 3)
      • W. Shockley , R.C. Prim . Space-charge-limited emission in semiconductors. Phys. Rev. , 753 - 758
    4. 4)
      • R. Baron , M.-A. Nicolet , V. Rodriguez . Differential step response of unipolar space-charge-limited current in solids. J. Appl. Phys. , 4156 - 4158

Related content

This is a required field
Please enter a valid email address