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Experimental evidence of transit-time effects in silicon punch-through diodes

Experimental evidence of transit-time effects in silicon punch-through diodes

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Small-signal frequency characteristics indicating the effect of hole transit times were measured for ‘punch-through’ pvp silicon diodes. The transit time was sufficiently long to allow measurements in a relatively low frequency range (0.5–18MHz), thus avoiding parasitic effects. Experimental results for several operating points in the square-law region of the d.c. characteristic agree very well with the theoretical frequency characteristics.

References

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