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Transistor fabrication using diffusion barriers produced by electron beams

Transistor fabrication using diffusion barriers produced by electron beams

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Diffusion barriers produced directly by electron-beam-initiated chemical reactions have been used to fabricate planar bipolar transistors without the use of normal oxidation or etching processes. Electrical characteristics of the transistors are comparable with conventional devices.

References

    1. 1)
      • Roberts, E.D.: `Rapid direct formation of silicous diffusion barriers by electron beams', Electron and ion beam science and technology third international conference, 1968, Electrochemical Society Inc, p. 570–579.
    2. 2)
      • Hatzakis, M.: `Electron beam techniques for high resolution circuit and mask fabrication', Electron and ion beam science and technology third international conference, 1968, Electrochemical Society Inc, p. 570–579, abstract 164.
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