Computer simulation of u.h.f.-transistor small-signal behaviour at high frequencies

Computer simulation of u.h.f.-transistor small-signal behaviour at high frequencies

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High-frequency 2-port parameters of a u.h.f. transistor are presented, which have been derived from the numerical 1-dimensional solution of small-signal internal behaviour. Results shown include the αlocus and the determination of fT from hfe in the gigahertz region. The validity of the II equivalent circuit is discussed.


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