Relaxation oscillations due to impact ionisation in epitaxial sheet-type Gunn oscillators

Relaxation oscillations due to impact ionisation in epitaxial sheet-type Gunn oscillators

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Relaxation oscillations have been observed in field-ionised epitaxial nGaAs samples on a semi-insulating substrate. The decay times of excess electrons and light output are reduced by a transverse magnetic field, indicating the presence of free holes driven towards the surface or the interface by the Suhl effect.


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