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Relaxation oscillations due to impact ionisation in epitaxial sheet-type Gunn oscillators

Relaxation oscillations due to impact ionisation in epitaxial sheet-type Gunn oscillators

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Relaxation oscillations have been observed in field-ionised epitaxial nGaAs samples on a semi-insulating substrate. The decay times of excess electrons and light output are reduced by a transverse magnetic field, indicating the presence of free holes driven towards the surface or the interface by the Suhl effect.

References

    1. 1)
      • J.B. Gunn . (1964) , Plasma effects in solids.
    2. 2)
      • J.S. Heeks . Some properties of the moving high-field domain in Gunn-effect devices. IEEE Trans. , 68 - 79
    3. 3)
      • S.G. Liu . Infrared and microwave radiations associated with a current-controlled instability in GaAs. Appl. Phys. Lett. , 79 - 81
    4. 4)
      • P.D. Southgate . Recombination processes following impact ionisation by high-field domains in GaAs. J. Appl. Phys. , 4589 - 4595
    5. 5)
      • D.B. Wittry , D.F. Kyser . Surface recombination velocities and diffusion lengths in GaAs. J. Phys. Soc. Japan , 312 - 316
    6. 6)
      • J.S. Heeks , A.D. Woode . Localized temporary increase in material conductivity following impact ionization in a Gunn effect domain. IEEE Trans. , 512 - 517
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