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Edge injection and pinch-in effect of transistors with cylindrical geometry

Edge injection and pinch-in effect of transistors with cylindrical geometry

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© The Institution of Electrical Engineers
Published

Simple analytical expressions are derived for the variation of the emitter current density along the emitter junction of a transistor with cylindrical geometry due to the flow of the base current parallel to the emitter junction. Depending on the sign of the base current, the emitter injects predominantly either on the edge or in the centre of the junction.

Inspec keywords: transistors

Subjects: Other field effect devices; Bipolar transistors

References

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      • REIN., H.-M.: ‘Ein Beitrag zum Schaltverhalten von Epitaxie-Planar-Transistoren im Bereich des Lawinendurchbruchs’, Vortrag auf der Diskussionssitzung der NTG (im VDE) in Bad Reichenhall, West-Deutschland, 1967.
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      • K. Wolff , F. Weitzsch . Rechnung zum Einschnüreffekt bei Transistoren Valvoberichte 5—Band 10. , 357 - 363
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