%0 Electronic Article %A R. Englemann %X A simplified model is proposed which describes the effect of the stray fields in dielectric surface layers on the dynamical behaviour of domains in thin Gunn-effect semiconductors. The stray fields cause an increase in domain capacitance and hence a decrease in build-up time which leads to larger n0L products for stable operation. %@ 0013-5194 %T Simplified model for the domain dynamics in Gunn-effect semiconductors covered with dielectric sheets %B Electronics Letters %D November 1968 %V 4 %N 24 %P 546-547 %I Institution of Engineering and Technology %U https://digital-library.theiet.org/;jsessionid=2wrs8ie1dpb85.x-iet-live-01content/journals/10.1049/el_19680425 %G EN