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Simplified model for the domain dynamics in Gunn-effect semiconductors covered with dielectric sheets

Simplified model for the domain dynamics in Gunn-effect semiconductors covered with dielectric sheets

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A simplified model is proposed which describes the effect of the stray fields in dielectric surface layers on the dynamical behaviour of domains in thin Gunn-effect semiconductors. The stray fields cause an increase in domain capacitance and hence a decrease in build-up time which leads to larger n0L products for stable operation.

References

    1. 1)
      • J.E. Carroll . Mechanisms in Gunn effect microwave oscillators. Radio Electron. Engr. , 17 - 30
    2. 2)
      • J.E. Carroll , R.A. Giblin . Low frequency analog for a Gunn-effect oscillator. IEEE Trans. , 640 - 656
    3. 3)
      • H.L. Hartnagel . Gunn-effect pulse code modulation. AEÜ , 225 - 229
    4. 4)
      • W. Heinle . Principles of a phenomenological theory of Gunn-effect domain dynamics. Solid-State Electron. , 583 - 598
    5. 5)
      • W. Shockley . Negative resistance arising from transit time in semiconductor diodes. Bell. Syst. Tech. J. , 799 - 826
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