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‘Punch-through’ transit-time oscillator

‘Punch-through’ transit-time oscillator

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It is shown that high-frequency negative resistance can be obtained in a space-charge-drift diode using ‘punch-through’ injection. Efficiencies for power generation of about 20% are estimated for the ideal structure. The device should be suitable for low-power low-noise applications.

Inspec keywords: transit time devices; oscillators

Subjects: Oscillators

References

    1. 1)
      • G.T. Wright . Transistor transit-time oscillator. Electron. Lett. , 234 - 235
    2. 2)
      • G.T. Wright . Efficiency of the transistor transit-time oscillator. Electron. Lett. , 217 - 219
    3. 3)
      • E.B. Kuchis , G.T. Wright . The silicon “punch-through” diode. Electron. Lett. , 35 - 37
    4. 4)
      • J. Shao , G.T. Wright . Characteristics of the space-charge-limited dielectric diode at very high frequencies. Solid-State Electron. , 291 - 303
    5. 5)
      • S. Brojdo . Characteristics of the dielectric diode and triode at very high frequencies. Solid-State Electron. , 611 - 629
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