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Microwave amplification with GaAs avalanche diodes

Microwave amplification with GaAs avalanche diodes

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Experimental results obtained with an Xband reflection amplifier using vapour-phase epitaxial GaAs pn junctions biased into avalanche breakdown are presented. Single-side-band noise figures of 17dB, power gains in excess of 30dB, and a high dynamic range have been repeatedly measured. The noise figures obtained with a large number of these diodes are significantly lower than those reported for Si or Ge diodes.

References

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      • E.F. Scherer . Large signal amplification with avalanche devices. Proc. Inst. Elect. Electronics Engrs. , 464 - 465
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      • A.S. Clorfeine . Self-pumped parametric amplification with an avalanche diode. Proc. Inst. Elect. Electronics Engrs. , 1956 - 1957
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      • F. Sterzer . Microwave solid state power sources. Microwave J. , 67 - 74
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