http://iet.metastore.ingenta.com
1887

Bulk-material device with current-controlled negative resistance

Bulk-material device with current-controlled negative resistance

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Current-controlled negative resistance following avalanche breakdown is shown by structures of bulk ptype InSb up to 150°K and of ptype In(As, P) up to 300°K. The high speed of the InSb devices suggests applications as microwave sources or switches.

Inspec keywords: semiconductor devices

Subjects: Bulk effect devices

References

    1. 1)
      • L.F. Eastman . A current-controlled negative-resistance effect in indium antimonide. IEEE Trans. , 117 - 121
    2. 2)
      • J.B. Gunn . Avalanche injection in semiconductors. Proc. Phys. Soc. , 781 - 790
    3. 3)
      • A.F. Gibson , J.R. Morgan . Avalanche injection diodes. Solid-State Electron. , 54 - 69
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19680414
Loading

Related content

content/journals/10.1049/el_19680414
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address