Noise behaviour of the m.o.s.f.e.t. at v.h.f. and u.h.f.

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Noise behaviour of the m.o.s.f.e.t. at v.h.f. and u.h.f.

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© The Institution of Electrical Engineers
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The optimum noise figures of an m.o.s.f.e.t. at u.h.f. and at pinch-off are calculated using a simplified equivalent circuit. The noise parameters are also determined experimentally. Theory and experiment are shown to be in good agreement. Noise parameters of the m.o.s.f.e.t. for the frequency range 0.1–0.8 GHz are given.

Inspec keywords: noise; transistors

Subjects: Semiconductor devices

References

    1. 1)
      • P. Richmann . , Characteristics and operation of m.o.s. field-effect devices.
    2. 2)
      • W. Bāchtold , M.J.O. Strutt . Simplified equivalent circuit for the noise-figure calculation of microwave transistors. Electronics Letters , 209 - 210
    3. 3)
      • J.T. Wallmark , H. Johnson . (1966) , Field-effect transistors.
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