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Characteristics of an electrometric amplifier using a varactor diode

Characteristics of an electrometric amplifier using a varactor diode

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An analysis method of an electrometric amplifier using two pumped low-reverse-current silicon diodes is described. First, a mathematical model representing the i(v) characteristic near the zero, where the surface effects are the most important, is proposed. Then, from this general model, both input resistance and amplifier-sensitivity coefficients are calculated.

References

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      • C.T. Sah , R.N. Noyce , W. Shockley . Carrier generation and recombination in p–njunctions and p–njunction characteristics. Proc. Inst. Radio Engrs. , 1228 - 1243
    2. 2)
      • A.S. Grove , D.J. Fitzgerald . Surface effects on p–njunction characteristics of surface space charge regions under non equilibrium conditions. Solid-State Electronics
    3. 3)
      • MARTINOT, A., B., and ESTEVE, D.: ‘Etude de l'évolution dans le temps des caractéristiques à faible niveau des composants électroniques’, Convention de Recherches CNET 65/45/108/00/790/75/45, Laboratoire du Génie Electrique Toulouse, 1967.
    4. 4)
      • L.A. Blackwell , K.L. Kotzelbre . (1961) , Semiconductor diode parametric amplifiers.
    5. 5)
      • Bajon, J.: `Contribution à l'étude de l'amplification électrométrique à l'aide de dispositifs paramétriques', 1968, Thèse de Docteur ès Sciences Physiques, , Toulouse.
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