Application of the reverse emitter-base breakdown and saturation of silicon planar transistors

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Application of the reverse emitter-base breakdown and saturation of silicon planar transistors

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© The Institution of Electrical Engineers
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Simple 3-terminal full-wave rectifiers have been designed that depend on the saturation and reverse emitter-base voltage breakdown of silicon planar transistors. The rectifier is used in a transition detector that generates an output pulse when the signal input changes between two voltage levels.

Inspec keywords: transistors

Subjects: Bipolar transistors

http://iet.metastore.ingenta.com/content/journals/10.1049/el_19680086
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