© The Institution of Electrical Engineers
The letter considers improvements in efficiency to be expected from varying the area or donor-density profile of a Gunn device. A method is given to design a diode theoretically capable of efficiencies approaching 40% for the best-quality GaAs with a peak/valley ratio approaching 3.
References
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1)
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Day, G.F.: `The achievement of high efficiency in Gunn effect devices', Proceedings of the international symposium on GaAs, 1966, Reading, Institute of Physics & the Physical Society, , p. 189–192.
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Carroll, J.E.: `A Gunn diode self-pumped parametric oscillator', 6th international conference on microwave and optical generation and amplification, 1966, Cambridge, IEE Conf. Publ. 27, , p. 309–314, 1967.
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