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Silicon ‘punch-through’ diode

Silicon ‘punch-through’ diode

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The large-signal a.c. characteristics of trap-controlled space-charge-limited current in silicon are described. At high frequencies, trapping is stationary and current occurs only when the applied signal voltage exceeds a threshold. Characteristics may be symmetrical or rectifying. Device capacitance is small and constant. Extremely sharp ‘turn-on’ and ‘turn-off’ of current is predicted with response times of the order of 5 ps. Device construction is simple and applications in microwave systems are envisaged.

References

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      • A. Rose . Space-charge-limited current in solids. Phys. Rev. , 1538 - 1544
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      • M.A. Lampert . Simplified theory of space-charge-limited current in an insulator with traps. Phys. Rev. , 1648 - 1656
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      • H. Lemke . Time dependence of space-charge-limited injection currents in iron-doped silicon. Phys. Status Solidi , 427 - 438
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      • Wright, G.T.: `The silicon “punch-through” diode', 292, Memorandum, 1966.
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      • E.B. Kuchis . Method of obtaining the a.c. calibration voltage. Ismeritielnaya tehnika(Measurement Technique) , 94 - 95
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      • T. Banys , J. Pozhela . Investigation of current harmonics in n-type germanium. Lietuvos Fizikos Rinkinys(Lithuanian Physics Proceedings) , 505 - 513
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