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Voltage tuning of concentric planar Gunn diodes

Voltage tuning of concentric planar Gunn diodes

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© The Institution of Electrical Engineers
Published

Voltage tuning of Gunn oscillations in the frequency range 1.5–8.5 GHz has been achieved by using planar Gunn diodes with concentric contacts. Frequency against voltage curves are presented for three diodes with somewhat different contact geometries, each of them having a tuning range of more than one octave. This simple method of tuning over large frequency ranges is of great potential interest. The production process using evaporation and etching is described.

Inspec keywords: microwave devices; semiconductor diodes

Subjects: Magnetic materials

References

    1. 1)
      • G. King , M.P. Wasse . High-power Gunn-effect oscillators usizng epitaxial GaAs. Electronics Letters , 314 - 315
    2. 2)
      • M. Shoji . A voltage tunable Gunn-effect oscillator. Proc. Inst. Elect. Electronics Engrs. , 130 - 131
    3. 3)
      • P.N. Butcher , W. Fawcett . Stable domain propagation in the Gunn-effect. Brit. J. Appl. Phys. , 1425 - 1432
    4. 4)
      • B. Jeppsson , I. Marklund . Failure mechanisms in Gunn diodes. Electronics Letters , 213 - 214
    5. 5)
      • J.B. Gunn . Effect of domain and circuit properties on oscillations in GaAs. IBM J. Res. Developm. , 310 - 320
    6. 6)
      • S.V. Jaskolski , T.K. Ishii . Simultaneous low-frequency relaxation and high-frequency microwave oscillation of a bulk GaAs, c.w. oscillator. Electronics Letters , 12 - 13
    7. 7)
      • Ward, A.L.: `Calculations of voltage tuning of Gunn oscillators due to doping gradients', Conference on solid-state devices, Inst. Phys. and Phys. Soc., 1967, University of Manchester Institute of Science and Technology.
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