Superconducting memory device using Josephson junctions

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Superconducting memory device using Josephson junctions

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© The Institution of Electrical Engineers
Published

A superconducting storage device is proposed in which a Josephson tunnelling junction, switched by a control film strip, replaces the cryotron in a one-cryotron-per-bit storage cell. The device should be fast, work at 4.2° K and require a simple technology, which must, however, yield reproducible thin Josephson tunnelling layers.

Inspec keywords: superconductivity; storage devices; semiconductor junctions

Subjects: Superconducting devices; Digital storage

References

    1. 1)
      • M.D. Fiske . Temperature and magnetic field dependences of Josephson tunnelling current. Rev. Mod. Phys. , 1
    2. 2)
      • T.D. Clark , J.P. Baldwin . (1967) , Storage elements for computers based on Josephson tunnelling.
    3. 3)
      • N.D. Richards . The design of large cryotron memories. IEEE Trans. Magnetics , 3
    4. 4)
      • T.I. Smith . Observation of persistent currents in a superconducting circuit containing a Josephson junction. Phys. Rev. Letters
    5. 5)
      • J. Matisoo . Subnanosecond pair-tunnelling to single-particle tunnelling transitions in Josephson junctions. Appl. Phys. Letters
    6. 6)
      • M.D. Fiske , I. Giaever . Superconductive tunnelling. Proc. Inst. Elect. Electronics Engrs.
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