Coherent homodyne detection at 10.6 μm with an extrinsic photoconductor

Coherent homodyne detection at 10.6 μm with an extrinsic photoconductor

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A laser-driven infrared-homodyne arrangement yielded a substantial increase in the sensitivity of a doped-silicon photoconductor. The improvement in detectivity was found to be limited by excess local-oscillator noise.


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