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Stability of high-frequency transistor in common-emitter configuration

Stability of high-frequency transistor in common-emitter configuration

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This letter describes the stability of the common-emitter transistor in terms of the y parameters in the high-frequency range; the graphical representation of the normalised input admittance of the transistor is also shown. This representation is useful and convenient for investigating performance of the input admittance in both design and analysis of circuits. The maximum frequency of potential instability of the common-emitter transistor is established using an approximate high-frequency equivalent circuit of a junction transistor.

Inspec keywords: transistor circuits

Subjects: Semiconductor devices

References

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      • A.P. Stern . (1956) , Considerations on the stability of active elements and applications to transistors.
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      • J.M. Rollett . Stability and power-gain invariants of linear two-ports. IRE Trans. , 29 - 32
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      • W. Ku . A simple derivation for the stability criterion of linear active two-ports. Proc. Inst. Elect. Electronics Engrs. , 310 - 311
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      • W.W. Gärtner . (1960) , Transistors: principles, design and applications.
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      • J.O. Scanlan , J.S. Singleton . The gain and stability of linear two-port amplifiers. IRE Trans. , 240 - 246
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      • Pritchard, R.L.: `Modern high-frequency transistors', Presented at the IRE–AIEE transistor and solid-state circuits conference, 1957, University of Pennsylvania.
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      • R.L. Pritchard . High-frequency power gain of junction transistors. Proc. Inst. Radio Engrs. , 1075 - 1085
    9. 9)
      • I.N. Sneddon . (1957) , Elements of partial differential equations.
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