Stability of high-frequency transistor in common-emitter configuration

Stability of high-frequency transistor in common-emitter configuration

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

This letter describes the stability of the common-emitter transistor in terms of the y parameters in the high-frequency range; the graphical representation of the normalised input admittance of the transistor is also shown. This representation is useful and convenient for investigating performance of the input admittance in both design and analysis of circuits. The maximum frequency of potential instability of the common-emitter transistor is established using an approximate high-frequency equivalent circuit of a junction transistor.

Inspec keywords: transistor circuits

Subjects: Semiconductor devices


    1. 1)
      • A.P. Stern . (1956) , Considerations on the stability of active elements and applications to transistors.
    2. 2)
      • J.M. Rollett . Stability and power-gain invariants of linear two-ports. IRE Trans. , 29 - 32
    3. 3)
      • J. Zawels . Gain-stability relationship. IRE Trans. , 107 - 110
    4. 4)
      • W. Ku . A simple derivation for the stability criterion of linear active two-ports. Proc. Inst. Elect. Electronics Engrs. , 310 - 311
    5. 5)
      • W.W. Gärtner . (1960) , Transistors: principles, design and applications.
    6. 6)
      • J.O. Scanlan , J.S. Singleton . The gain and stability of linear two-port amplifiers. IRE Trans. , 240 - 246
    7. 7)
      • Pritchard, R.L.: `Modern high-frequency transistors', Presented at the IRE–AIEE transistor and solid-state circuits conference, 1957, University of Pennsylvania.
    8. 8)
      • R.L. Pritchard . High-frequency power gain of junction transistors. Proc. Inst. Radio Engrs. , 1075 - 1085
    9. 9)
      • I.N. Sneddon . (1957) , Elements of partial differential equations.

Related content

This is a required field
Please enter a valid email address