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Very low-frequency measurements of flicker noise in silicon planar transistors

Very low-frequency measurements of flicker noise in silicon planar transistors

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The noise-power spectrum from 0.01 to 10−4 Hz is measured using a progressive bandwidth-measuring method. The 1/f law is verified, and it is found that flicker noise may be represented in the common-emitter configuration by an input current generator iB given in terms of current collector Ie and current gain β by iB2̅ = CΔf/fIe3/22

References

    1. 1)
      • G. Giralt , J.C. Martin , F.X. Mateu-Pfrez . Sur un phènomène de bruit dans les transistors, caractérisé par des créneaux de courant d'amplitude constante. CR Acad. Sci. , 5350 - 5353
    2. 2)
      • G. Giralt , J.C. Martin , F.X. Mateu-Perez . Le bruit en créneaux des transistors plans au silicium. Electronics Letters , 228 - 230
    3. 3)
      • J.L. Plumb , F.R. Chenette . Flicker noise in transistors. IEEE Trans. , 304 - 308
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